Study of evolution of active volume in irradiated silicon detectors

被引：25

作者：

Casse, G ^{[1
]}

Glaser, M ^{[1
]}

Grigoriev, E ^{[1
]}

机构：

[1] CERN, CH-1211 Geneva, Switzerland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 426卷 / 01期

关键词：

D O I：

10.1016/S0168-9002(98)01483-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Light pulses emitted by a red (670 nm) Light Emitting Diode (LED) have been used to study the charge collection properties of non-irradiated and irradiated n-type silicon detectors. The advantages of red LED light pulses, compared to low-range alpha particles, are the availability of an external trigger and a very shallow distribution of the created e-h pairs ( < 10 mu m). These features, combined with the use of a fast current amplifier and a 2.5 Gs/s sampling oscilloscope, allow the study of the evolution of the electric field in irradiated detectors. Evidence of a sensitive region on both sides of the detector has been observed. The model of the diode that depletes from the nt junction side after conductivity-type inversion is discussed and the electric field distribution in the inverted detector is presented. A first evaluation of the strength of the electric field in the undepleted bulk of the detector is proposed. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

引用

页码：140 / 146

页数：7

共 9 条

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