Thermal stability study of Ni/Ta n-GaN Schottky contacts

被引：28

作者：

Chen, GL ^{[1
]}

Chang, FC

Shen, KC

Ou, J

Chen, WH

Lee, MC

Chen, WK

Jou, MJ

Huang, CN

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[2] Epistar Corp, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 04期

关键词：

D O I：

10.1063/1.1425455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Schottky behavior of Ni/Ta and Ni contacts on n-GaN was investigated under various annealing conditions by current-voltage measurements. It is found that with the addition of Ta between the Ni layer and the GaN substrate the thermal stability properties of devices can be significantly improved. Experimental results indicate that a high quality Ni/Ta n-GaN Schottky diode with an ideality factor and barrier height of 1.16 and 1.24 eV, respectively, can be obtained under 1 h annealing, at 700 degreesC. (C) 2002 American Institute of Physics.

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页码：595 / 597

页数：3

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