Effects of thermal annealing on Ni/Ta/n-GaN Schottky diodes

被引：6

作者：

Chen, GL ^{[1
]}

Chang, FC ^{[1
]}

Chung, WC ^{[1
]}

Huang, BR ^{[1
]}

Chen, WH ^{[1
]}

Lee, MC ^{[1
]}

Chen, WK ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 3B期

关键词：

Ni/Ta/n-GaN; Auger electron spectroscopy;

D O I：

10.1143/JJAP.40.L255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal effects of Ni/Ta/n-GaN Schottky diodes have been investigated for the first time using current-voltage, X-ray photoemission spectroscopy and Auger electron spectroscopy (AES) methods. Their barrier height is found to increase monotonously with increasing annealing temperature up to 800 degreesC. Preliminary results indicate that when a Th intermediate layer is added into the Ni/GaN diodes, it can prevent the metal-semiconductor interdiffusion and Ni accumulation adjacent to GaN substrate to a large extent so that a more thermally stable device can be obtained.

引用

页码：L255 / L258

页数：4

共 14 条

[1]

Chen G., UNPUB

[2] STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].