A rad-hard CMOS active pixel sensor for electron microscopy

被引:42
作者
Battaglia, Marco [1 ,2 ]
Contarato, Devis [1 ]
Denes, Peter [1 ]
Doering, Dionisio [1 ]
Giubilato, Piero [1 ,3 ,4 ]
Kim, Tae Sung [1 ]
Mattiazzo, Serena [3 ,4 ]
Radmilovic, Velimir [1 ]
Zalusky, Sarah [1 ,2 ]
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[3] Ist Nazl Fis Nucl, Sez Padova, I-35131 Padua, Italy
[4] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy
关键词
Monolithic active pixel sensor; Transmission electron microscopy; SIMULATION; DETECTOR; TRACKING;
D O I
10.1016/j.nima.2008.09.029
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure able to withstand doses in excess of 1 Mrad. Data collected with electron beams at various energies of interest in electron microscopy are compared to predictions of simulation and to 1.5 GeV electron data to disentagle the effect of multiple scattering. The point spread function measured with 300 keV electrons is (8.1 +/- 1.6) pm for 10 mu m pixel and (10.9 +/- 2.3) mu m for 20 mu m pixels, respectively, which agrees well with the values of 8.4 and 10.5 mu m predicted by our simulation. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:642 / 649
页数:8
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