Active Pixel Sensors for electron microscopy

被引:21
作者
Denes, P. [1 ]
Bussat, J.-M.
Lee, Z.
Radmillovic, V.
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Engn, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA
关键词
electron microscopy; Active Pixel Sensor;
D O I
10.1016/j.nima.2007.05.308
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The technology used for monolithic CMOS imagers, popular for cell phone cameras and other photographic applications, has been explored for charged particle tracking by the high-energy physics community for several years. This technology also lends itself to certain imaging detector applications in electron microscopy. We have been developing such detectors for several years at Lawrence Berkeley National Laboratory, and we and others have shown that this technology can offer excellent point-spread function, direct detection and high readout speed. In this paper, we describe some of the design constraints peculiar to electron microscopy and summarize where such detectors could play a useful role. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:891 / 894
页数:4
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