Demonstration of efficient p-type doping in AlxGa1-xN/GaN superlattice structures

被引：32

作者：

Goepfert, ID ^{[1
]}

Schubert, EF

Osinsky, A

Norris, PE

机构：

[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

[2] NZ Appl Technol, Woburn, MA 01801 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 13期

关键词：

D O I：

10.1049/el:19990758

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Enhanced acceptor activation, reduced acceptor binding energy and enhanced conductivity are demonstrated in AlxGa1-xN/GaN doped superlattice structures. An acceptor activation energy of 58meV is demonstrated in an Al0.20Ga0.80N/GaN superlattice structure with a period of 200 Angstrom. This value is significantly lower than the 200meV activation energy measured in bulk GaN. The dependence of activation energy on the Al content of the superlattice is consistent with that predicted by the theoretical model. The demonstration of improved p-type doping characteristics in GaN is expected to enable the realisation of electronic and optoelectronic devices with improved properties.

引用

页码：1109 / 1111

页数：3

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