Electronic versus phononic friction of xenon on silver

被引:33
作者
Liebsch, A
Gonçalves, S
Kiwi, M
机构
[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[2] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil
[3] Pontificia Univ Catolica Chile, Fac Fis, Santiago 22, Chile
关键词
D O I
10.1103/PhysRevB.60.5034
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Molecular dynamics simulations of a Xe monolayer sliding on Ag(001) and Ag(111) are carried out in order to ascertain the microscopic origin of friction. For several values of the electronic contribution to the friction of individual Xe atoms, the intraoverlayer phonon dissipation is calculated as a function of the corrugation amplitude of the substrate potential, which is a pertinent parameter to consider. Within the accuracy of the numerical results and the uncertainty with which the values of the relevant parameters are known at present, we conclude that electronic and phononic dissipation channels are of similar importance. While phonon friction gives rise to the rapid variation with coverage, the electronic friction provides a roughly coverage-independent contribution to the overall sliding friction. [S0163-1829(99)14231-0].
引用
收藏
页码:5034 / 5043
页数:10
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