Photoelectronic transport imaging of individual semiconducting carbon nanotubes

被引:97
作者
Balasubramanian, K
Fan, YW
Burghard, M
Kern, K
Friedrich, M
Wannek, U
Mews, A
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Univ Mainz, Inst Phys Chem, D-55099 Mainz, Germany
关键词
D O I
10.1063/1.1688451
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoconductivity in individual semiconducting single-wall carbon nanotubes was investigated, using a confocal scanning optical microscope. The magnitude of the photocurrent was found to increase linearly with the laser intensity, and,to be maximum for parallel orientation between the light polarization and the tube axis. Larger currents were obtained upon illuminating the tubes at 514.5 nm in comparison:to those at 647.1 nm, consistent with the semiconducting tubes having a resonant absorption energy at the former wavelength. Moreover, the determination of the photoresponse as a function of position along single nanotubes has proven to be a useful tool to monitor local electronic structure effects. (C) 2004 American Institute of Physics.
引用
收藏
页码:2400 / 2402
页数:3
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