Thermoelectric performance of half-Heusler compounds TiNiSn and TiCoSb

被引:89
作者
Wang, L. L. [1 ,2 ]
Miao, L. [1 ,2 ]
Wang, Z. Y. [1 ,2 ]
Wei, W. [1 ,2 ]
Xiong, R. [1 ,2 ]
Liu, H. J. [1 ,2 ]
Shi, J. [1 ,2 ,3 ]
Tang, X. F. [4 ]
机构
[1] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
[2] Wuhan Univ, Key Lab Acoust & Photon Mat & Devices, Minist Educ, Wuhan 430072, Peoples R China
[3] Acad Sinica, Int Ctr Mat Phys, Shenyang 110015, Peoples R China
[4] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
基金
中国国家自然科学基金;
关键词
LATTICE THERMAL-CONDUCTIVITY; ELECTRONIC-STRUCTURE; PARTIAL SUBSTITUTION; TRANSPORT-PROPERTIES; NI; TEMPERATURE; ZRNISN; PHASES; CO; 1ST-PRINCIPLES;
D O I
10.1063/1.3056384
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electronic structures of half-Heusler compounds TiNiSn and TiCoSb are investigated by using the full-potential linearized augmented plane-wave method. When the spin-orbital coupling is included in the calculations, there is only a slight change in the energy band structures. The transport coefficients (Seebeck coefficient, electrical conductivity, and power factor) are then calculated within the Boltzmann theory, and further evaluated as a function of chemical potential assuming a rigid band picture. Our calculations offer a valuable insight on how to improve the thermoelectric performance of these two compounds. (C) 2009 American Institute of Physics.
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页数:5
相关论文
共 31 条
[1]   Effect of Sb doping on the thermoelectric properties of Ti-based half-Heusler compounds, TiNiSn1-xSbx [J].
Bhattacharya, S ;
Pope, AL ;
Littleton, RT ;
Tritt, TM ;
Ponnambalam, V ;
Xia, Y ;
Poon, SJ .
APPLIED PHYSICS LETTERS, 2000, 77 (16) :2476-2478
[2]   Grain structure effects on the lattice thermal conductivity of Ti-based half-Heusler alloys [J].
Bhattacharya, S ;
Tritt, TM ;
Xia, Y ;
Ponnambalam, V ;
Poon, SJ ;
Thadhani, N .
APPLIED PHYSICS LETTERS, 2002, 81 (01) :43-45
[3]  
Blaha P., 2002, WIEN2k, An Augmented Plane Wave Plus Local Orbitals Program for Calculating Crystal Properties
[4]   Electronic structure and thermopower of Ni(Ti0.5Hf0.5)Sn and related half-Heusler phases -: art. no. 045121 [J].
Chaput, L ;
Tobola, J ;
Pécheur, P ;
Scherrer, H .
PHYSICAL REVIEW B, 2006, 73 (04)
[5]   Efficient dopants for ZrNiSn-based thermoelectric materials [J].
Hohl, H ;
Ramirez, AP ;
Goldmann, C ;
Ernst, G ;
Wölfing, B ;
Bucher, E .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (07) :1697-1709
[6]   New compounds with MgAgAs-type structure: NbIrSn and NbIrSb [J].
Hohl, H ;
Ramirez, AP ;
Goldmann, C ;
Ernst, G ;
Wolfing, B ;
Bucher, E .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (35) :7843-7850
[7]   ANALYSIS OF LATTICE THERMAL CONDUCTIVITY [J].
HOLLAND, MG .
PHYSICAL REVIEW, 1963, 132 (06) :2461-&
[8]   First-principles study of electronic structure and thermoelectric properties of CeRhAs and related compounds [J].
Ishii, F ;
Onoue, M ;
Oguchi, T .
PHYSICA B-CONDENSED MATTER, 2004, 351 (3-4) :316-318
[9]   Effect of substitution for Ni by Co and/or Cu on the thermoelectric properties of half-Heusler ZrNiSn [J].
Katsuyama, S ;
Matsushima, H ;
Ito, M .
JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 385 (1-2) :232-237
[10]   High temperature thermoelectric properties of CoTiSb half-Heusler compounds [J].
Kawaharada, Y ;
Kurosaki, K .
JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 384 (1-2) :308-311