共 10 条
[5]
Time-dependent dielectric degradation (TDDD) influenced by ultrathin film oxidation process
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1996, 35 (2B)
:1478-1483
[6]
Observation of oxide-thickness-dependent interface roughness in Si MOS structure
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1996, 35 (2B)
:1440-1444
[7]
Clarification of nitridation effect on oxide formation methods
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1996, 35 (2B)
:1454-1459
[8]
SHANKOFF TA, 1989, J ELECTROCHEM SOC, V127, P216