Gate oxide reliability improvement related to dry local oxidation of silicon

被引：1

作者：

Bellutti, P

Zorzi, N

Verzellesi, G ^{[1
]}

机构：

[1] Univ Trent, Dept Mat Engn, I-38050 Trento, Italy

[2] Ist Ric Sci & Tecnol, ITC, I-38050 Trento, Italy

来源：

MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 02期

关键词：

D O I：

10.1016/S0026-2714(98)00221-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gate oxide reliability can be effectively improved by using dry field oxidation instead of the conventional wet one. The obtained improvement is suggested to occur because of a better oxide quality in the active region border due to the absence of the characteristic defects induced by wet local oxidation. (C) 1999 Elsevier Science Ltd. All rights reserved.

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页码：181 / 185

页数：5

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