Vapor-Solid Growth of High Optical Quality MoS2 Monolayers with Near-Unity Valley Polarization

被引:387
作者
Wu, Sanfeng [1 ]
Huang, Chunming [1 ]
Aivazian, Grant [1 ]
Ross, Jason S. [2 ]
Cobden, David H. [1 ]
Xu, Xiaodong [1 ,2 ]
机构
[1] Univ Washington, Dept Phys, Seattle, WA 98195 USA
[2] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA
关键词
molybdenum disulfide; monolayer; vapor-solid growth; photoluminescence; valley polarization; valleytronics; ATOMIC LAYERS; GRAPHENE; PHOTOLUMINESCENCE; EXFOLIATION;
D O I
10.1021/nn4002038
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Monolayers of transition metal dichaicogenides (TMDCs) are atomically thin directgap semiconductors with potential applications in nanoelectronics, optoelectronics, and electrochemical sensing. Recent theoretical and experimental efforts suggest that they are ideal systems for exploiting the valley degrees of freedom of Bloch electrons. For example, Dirac valley polarization has been demonstrated in mechanically exfoliated monolayer MoS2 samples by polarization-resolved photoluminescence, although polarization has rarely been seen at room temperature. Here we report a new method for synthesizing high optical quality monolayer MoS2 single crystals up to 25 pm In size on a variety of standard insulating substrates (SiO2, sapphire, and glass) using a catalyst-free vapor-solid growth mechanism. The technique is simple and reliable, and the optical quality of the crystals is extremely high, as demonstrated by the fact that the valley polarization approaches unity at 30 K and persists at 35% even at room temperature, suggesting a virtual absence of defects. This will allow greatly improved optoelectronic TMDC monolayer devices to be fabricated and studied routinely.
引用
收藏
页码:2768 / 2772
页数:5
相关论文
共 30 条
[1]   Valley-selective circular dichroism of monolayer molybdenum disulphide [J].
Cao, Ting ;
Wang, Gang ;
Han, Wenpeng ;
Ye, Huiqi ;
Zhu, Chuanrui ;
Shi, Junren ;
Niu, Qian ;
Tan, Pingheng ;
Wang, Enge ;
Liu, Baoli ;
Feng, Ji .
NATURE COMMUNICATIONS, 2012, 3
[2]   Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials [J].
Coleman, Jonathan N. ;
Lotya, Mustafa ;
O'Neill, Arlene ;
Bergin, Shane D. ;
King, Paul J. ;
Khan, Umar ;
Young, Karen ;
Gaucher, Alexandre ;
De, Sukanta ;
Smith, Ronan J. ;
Shvets, Igor V. ;
Arora, Sunil K. ;
Stanton, George ;
Kim, Hye-Young ;
Lee, Kangho ;
Kim, Gyu Tae ;
Duesberg, Georg S. ;
Hallam, Toby ;
Boland, John J. ;
Wang, Jing Jing ;
Donegan, John F. ;
Grunlan, Jaime C. ;
Moriarty, Gregory ;
Shmeliov, Aleksey ;
Nicholls, Rebecca J. ;
Perkins, James M. ;
Grieveson, Eleanor M. ;
Theuwissen, Koenraad ;
McComb, David W. ;
Nellist, Peter D. ;
Nicolosi, Valeria .
SCIENCE, 2011, 331 (6017) :568-571
[3]   Photoluminescence from Chemically Exfoliated MoS2 [J].
Eda, Goki ;
Yamaguchi, Hisato ;
Voiry, Damien ;
Fujita, Takeshi ;
Chen, Mingwei ;
Chhowalla, Manish .
NANO LETTERS, 2011, 11 (12) :5111-5116
[4]   Extraordinary Room-Temperature Photoluminescence in Triangular WS2 Monolayers [J].
Gutierrez, Humberto R. ;
Perea-Lopez, Nestor ;
Elias, Ana Laura ;
Berkdemir, Ayse ;
Wang, Bei ;
Lv, Ruitao ;
Lopez-Urias, Florentino ;
Crespi, Vincent H. ;
Terrones, Humberto ;
Terrones, Mauricio .
NANO LETTERS, 2013, 13 (08) :3447-3454
[5]   MOS2 THIN-FILM SYNTHESIS BY SOFT SULFURIZATION OF A MOLYBDENUM LAYER [J].
HADOUDA, H ;
POUZET, J ;
BERNEDE, JC ;
BARREAU, A .
MATERIALS CHEMISTRY AND PHYSICS, 1995, 42 (04) :291-297
[6]   Few-Layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential [J].
Kong, Desheng ;
Dang, Wenhui ;
Cha, Judy J. ;
Li, Hui ;
Meister, Stefan ;
Peng, Hailin ;
Liu, Zhongfan ;
Cui, Yi .
NANO LETTERS, 2010, 10 (06) :2245-2250
[7]   Low-temperature photocarrier dynamics in monolayer MoS2 [J].
Korn, T. ;
Heydrich, S. ;
Hirmer, M. ;
Schmutzler, J. ;
Schueller, C. .
APPLIED PHYSICS LETTERS, 2011, 99 (10)
[8]   Anomalous Lattice Vibrations of Single- and Few-Layer MoS2 [J].
Lee, Changgu ;
Yan, Hugen ;
Brus, Louis E. ;
Heinz, Tony F. ;
Hone, James ;
Ryu, Sunmin .
ACS NANO, 2010, 4 (05) :2695-2700
[9]   Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition [J].
Lee, Yi-Hsien ;
Zhang, Xin-Quan ;
Zhang, Wenjing ;
Chang, Mu-Tung ;
Lin, Cheng-Te ;
Chang, Kai-Di ;
Yu, Ya-Chu ;
Wang, Jacob Tse-Wei ;
Chang, Chia-Seng ;
Li, Lain-Jong ;
Lin, Tsung-Wu .
ADVANCED MATERIALS, 2012, 24 (17) :2320-2325
[10]   Atomically Thin MoS2: A New Direct-Gap Semiconductor [J].
Mak, Kin Fai ;
Lee, Changgu ;
Hone, James ;
Shan, Jie ;
Heinz, Tony F. .
PHYSICAL REVIEW LETTERS, 2010, 105 (13)