The coupling between localized surface plasmons and excitons via Purcell effect

被引:18
作者
Wang, Feng
Li, Dongsheng [1 ]
Yang, Deren
Que, Duanlin
机构
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
来源
NANOSCALE RESEARCH LETTERS | 2012年 / 7卷
基金
中国国家自然科学基金;
关键词
Localized surface plasmons; Silicon-rich silicon nitride; Silver nanostructures; Average position of excitons; Luminescence; LIGHT-EMISSION; NANOPARTICLES; GENERATION; PHOTONICS; DEVICES;
D O I
10.1186/1556-276X-7-669
中图分类号
TB3 [工程材料学];
学科分类号
082905 [生物质能源与材料];
摘要
The coupling between localized surface plasmons (LSPs) within silver nanostructures and excitons in a silicon-rich silicon nitride (SiN (x) ) matrix has been demonstrated via the Purcell effect. A simple model is employed for the estimation of the Purcell factor as well as the average position of excitons within a luminescence matrix. The estimated average position of the excitons is located at approximately 40 nm beneath the top surface of the SiN (x) films. The approaches for further improving the optoelectrical properties of the luminescence matrix are anticipated based on the model we adopted. The optimization of the thickness of the luminescence matrix as well as the size and shape of metal nanostructures may be the alternative approaches. Besides, the application of multilayers with the luminescence matrix inserted between barrier layers (we defined it as confined structures here) may be also an available choice. Our work may provide a deep comprehension on the coupling between LSPs and excitons, which is not limited to a certain luminescence material but with unconfined structures.
引用
收藏
页码:1 / 6
页数:6
相关论文
共 26 条
[1]
Azzam R. M. A., 1977, Ellipsometry and Polarized Light
[2]
Surface plasmon subwavelength optics [J].
Barnes, WL ;
Dereux, A ;
Ebbesen, TW .
NATURE, 2003, 424 (6950) :824-830
[3]
Electrical Excitation of Surface Plasmons [J].
Bharadwaj, Palash ;
Bouhelier, Alexandre ;
Novotny, Lukas .
PHYSICAL REVIEW LETTERS, 2011, 106 (22)
[4]
Electrically Controlled Nonlinear Generation of Light with Plasmonics [J].
Cai, Wenshan ;
Vasudev, Alok P. ;
Brongersma, Mark L. .
SCIENCE, 2011, 333 (6050) :1720-1723
[5]
Cazzanelli M, 2012, NAT MATER, V11, P148, DOI [10.1038/nmat3200, 10.1038/NMAT3200]
[6]
Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions [J].
Cen, Z. H. ;
Chen, T. P. ;
Ding, L. ;
Liu, Y. ;
Wong, J. I. ;
Yang, M. ;
Liu, Z. ;
Goh, W. P. ;
Zhu, F. R. ;
Fung, S. .
APPLIED PHYSICS LETTERS, 2009, 94 (04)
[7]
Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers [J].
Huang, R. ;
Wang, D. Q. ;
Ding, H. L. ;
Wang, X. ;
Chen, K. J. ;
Xu, J. ;
Guo, Y. Q. ;
Song, J. ;
Ma, Z. Y. .
OPTICS EXPRESS, 2010, 18 (02) :1144-1150
[8]
Exploitation of localized surface plasmon resonance [J].
Hutter, E ;
Fendler, JH .
ADVANCED MATERIALS, 2004, 16 (19) :1685-1706
[9]
Enhancement of local electromagnetic fields in plasmonic crystals of coaxial metallic nanostructures [J].
Iwanaga, Masanobu ;
Ikeda, Naoki ;
Sugimoto, Yoshimasa .
PHYSICAL REVIEW B, 2012, 85 (04)
[10]
Jackson J.D., 2001, Classical Electrodynmaics, VThird