Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions

被引：38

作者：

Cen, Z. H. ^{[1
]}

Chen, T. P. ^{[1
]}

Ding, L. ^{[1
]}

Liu, Y. ^{[1
,2
]}

Wong, J. I. ^{[1
]}

Yang, M. ^{[1
]}

Liu, Z. ^{[1
]}

Goh, W. P. ^{[3
]}

Zhu, F. R. ^{[3
]}

Fung, S. ^{[4
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

[3] Inst Mat Res & Engn, Singapore 117602, Singapore

[4] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

annealing; electroluminescence; ion implantation; silicon; silicon compounds; spectral line intensity; thin films; QUANTUM DOTS; DIOXIDE LAYERS; PHOTOLUMINESCENCE; LUMINESCENCE; STATES; BLUE;

D O I：

10.1063/1.3068002

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 degrees C. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at similar to 3.0 eV (415 nm) and the strong green-yellow band at similar to 2.2 eV (560 nm). Two weak bands including the ultraviolet band at similar to 3.8 eV and the near infrared band at similar to 1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed.

引用

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