Origin of visible luminescence in hydrogenated amorphous silicon nitride

被引：64

作者：

Hao, H. L.

Wu, L. K.

Shen, W. Z. ^{[1
]}

Dekkers, H. F. W.

机构：

[1] Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spectroscopy & Opto Elect Ph, Shanghai 200030, Peoples R China

[2] IMEC, Solar Cell Technol, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 20期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2814053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a detailed investigation on the origin of the room-temperature visible luminescence in hydrogenated amorphous silicon nitride films. In combination with Raman spectroscopy and high resolution transmission electron microscopy, we demonstrate clearly that the red light emission originates from amorphous silicon quantum dots. On the basis of the redshift of peak position, narrowing of bandwidth, and temperature quenching of luminescence, we attribute the green emission to the bandtail recombination of carriers. In addition, the blue luminescence is assigned to the silicon-related defects according to the analysis for the gap states in silicon nitride. (c) 2007 American Institute of Physics.

引用

页数：3

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