Photoluminescence of silicon quantum dots in silicon nitride grown by NH3 and SIH4 -: art. no. 091908

被引：129

作者：

Kim, BH ^{[1
]}

Cho, CH ^{[1
]}

Kim, TW ^{[1
]}

Parka, NM ^{[1
]}

Sung, GY ^{[1
]}

Park, SJ ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Nanophoton Semicond Lab, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 09期

关键词：

D O I：

10.1063/1.1872211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence (PL) property of crystalline silicon quantum dots (Si QDs) in silicon nitride grown by using ammonia and silane gases is reported. The peak position of PL could be controlled in the wavelength range from 450 to 700 nm by adjusting the flow rates of ammonia and silane gases. The PL intensity of Si QDs grown by ammonia was more intense compared to that of Si QDs grown by nitrogen gas. To investigate the role of hydrogen in the PL enhancement, the Si QDs grown by nitrogen gas were postannealed under hydrogen ambient. The enhancement in PL intensity was attributed to the hydrogen passivation of dangling bonds related to silicon and/or nitrogen at the interface of Si QDs and silicon nitride. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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