Light emission efficiency and dynamics in silicon-rich silicon nitride films

被引：164

作者：

Dal Negro, L.

Yi, J. H.

Michel, J.

Kimerling, L. C.

Chang, T. -W. F.

Sukhovatkin, V.

Sargent, E. H.

机构：

[1] MIT, Cambridge, MA 02139 USA

[2] Univ Toronto, Toronto, ON M5S 3G4, Canada

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 23期

基金：

加拿大自然科学与工程研究理事会; 加拿大创新基金会; 美国国家科学基金会;

关键词：

D O I：

10.1063/1.2208378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Light-emitting Si-rich silicon nitride (SRN) films were fabricated by plasma enhanced chemical vapor deposition followed by thermal annealing and the SRN. external quantum efficiency was measured. The SRN light emission temperature dependence and recombination dynamics were also studied. Small emission thermal quenching from 4, to 330 K with wavelength dependent, nanosecond recombination lifetime was observed. Light emission from SRN systems can provide alternative routes towards the fabrication of efficient Si-based optical devices. (c) 2006 American Institute of Physics.

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页数：3

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