Stimulated emission in a nanostructured silicon pn junction diode using current injection

被引：93

作者：

Chen, MJ ^{[1
]}

Yen, JL

Li, JY

Chang, JF

Tsai, SC

Tsai, CS

机构：

[1] Acad Sinica, Inst Appl Sci & Engn Res, Taipei 115, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[3] Calif State Univ Long Beach, Dept Chem Engn, Long Beach, CA 90840 USA

[4] Univ Calif Irvine, Dept Elect Engn & Comp Sci, Irvine, CA 92697 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 12期

关键词：

D O I：

10.1063/1.1687458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stimulated emission at bandgap energy of 1.1 eV was observed in a silicon nanostructured pn junction diode using current injection at room temperature. Nonuniform diffusion using spin-on boron dopant mixed with silicon dioxide nanoparticles was used to fabricate the device. The spatial confinement of carriers through such localization structures contributes to the enhancement of the stimulated emission. The experimental results show a drastic increase in the optical power and multiple spectral peaks at wavelengths longer than the main peak of spontaneous emission through various phonon-assisted radiative recombination processes. When the injection current significantly exceeds a threshold, a single peak dominates, exhibiting stimulated emission. (C) 2004 American Institute of Physics.

引用

页码：2163 / 2165

页数：3

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