Temperature dependence of the indirect energy gap in crystalline silicon

被引：122

作者：

Alex, V

Finkbeiner, S

Weber, J

机构：

[1] Max-Planck-Inst. F. F., D-70506 Stuttgart

[2] Robert Bosch GmbH, D-72703 Reutlingen

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 09期

关键词：

D O I：

10.1063/1.362447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence spectra of crystalline silicon samples are measured for temperatures below 1000 K. The optical transitions are analyzed in terms of excitonic and band-to-band transitions. From the modeling of the line shape we are able to determine the fundamental indirect band gap for temperatures up to 750 K. The temperature dependence follows the Varshni equation with E(g)(0)=1.1692 eV, alpha=(4.9+/-0.2)X10(-4) eV/K and beta=(655+/-40) K. (C) 1996 American Institute of Physics.

引用

页码：6943 / 6946

页数：4

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ALEX V, UNPUB

[2]

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Bebb H.B., 1972, Semiconductors and Semimetals, V8, P181, DOI DOI 10.1016/S0080-8784(08)62345-5

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