Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices

被引：39

作者：

Huang, Rui ^{[1
,2
]}

Dong, Hengping ^{[1
,2
]}

Wang, Danqing ^{[1
,2
]}

Chen, Kunji ^{[1
,2
]}

Ding, Honglin ^{[1
,2
]}

Wang, Xiang ^{[1
,2
]}

Li, Wei ^{[1
,2
]}

Xu, Jun ^{[1
,2
]}

Ma, Zhongyuan ^{[1
,2
]}

机构：

[1] Nanjing Univ, State Key Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, State Key Lab Solid State Microstruct, Dept Phys, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 18期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2920819

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the effects of barrier layer on the electroluminescence properties of the SiN-based multilayer light-emitting devices (LEDs). It is found that the emission efficiency is significantly enhanced by more than one order of magnitude compared to that of LED without barrier layer. Meanwhile, the emission wavelength can also be tuned from 620 to 540 nm by controlling the Si/N ratio of the barrier layer. The improved performance of LEDs can be attributed to the variation in the band offset between the Si-rich SiN well layer and the N-rich SiN barrier layer. (C) 2008 American Institute of Physics.

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页数：3

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