The influence of the implantation dose and energy on the electroluminescence of Si+-implanted amorphous SiO2 thin films

被引：18

作者：

Ding, L. ^{[1
]}

Chen, T. P.

Liu, Y.

Yang, M.

Wong, J. I.

Liu, K. Y.

Zhu, F. R.

Fung, S.

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Inst Mat Res & Engn, Singapore 117602, Singapore

[3] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 45期

关键词：

D O I：

10.1088/0957-4484/18/45/455306

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 [材料科学与工程]; 080502 [材料学];

摘要：

Visible and infrared (IR) electroluminescence (EL) has been observed from a metal-oxide-semiconductor-like (MOS-like) structure with Si nanocrystals (nc-Si) embedded in the gate oxide fabricated with low-energy ion implantation. The EL spectra are found to consist of four Gaussian-shaped luminescence bands with their peak wavelengths at similar to 460, similar to 600, similar to 740, and similar to 1260 nm, respectively, among which the similar to 600 nm band is the dominant one. Different nanocrystal distributions are achieved by varying the implanted Si ion dose and implantation energy. The nanocrystal distribution is found to play an important role in the EL. The influence of the applied voltage, the implantation dose, and implantation energy on the luminescence bands has been investigated.

引用

页数：6

共 37 条

[1]

SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[2]

Core-level shift of Si nanocrystals embedded in a SiO2 matrix [J].

Chen, TP ;

Liu, Y ;

Sun, CQ ;

Tse, MS ;

Hsieh, JH ;

Fu, YQ ;

Liu, YC ;

Fung, S .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (43) :16609-16612

[3]

Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient [J].

Chen, XY ;

Lu, YF ;

Wu, YH ;

Cho, BJ ;

Liu, MH ;

Dai, DY ;

Song, WD .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) :6311-6319

[4]

Cheong HM, 1996, APPL PHYS LETT, V68, P87, DOI 10.1063/1.116767

[5]

Excimer laser absorption by metallic nano-particles embedded in silica [J].

Crespo-Sosa, A. ;

Schaaf, P. ;

Reyes-Esqueda, J. A. ;

Seman-Harutinian, J. A. ;

Oliver, A. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (07) :1890-1895

[6]

Optical properties of silicon nanocrystal LEDs [J].

De la Torre, J ;

Souifi, A ;

Poncet, A ;

Busseret, C ;

Lemiti, M ;

Bremond, G ;

Guillot, G ;

Gonzalez, O ;

Garrido, B ;

Morante, JR ;

Bonafos, C .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 16 (3-4) :326-330

[7]

Cathodoluminescence and solid phase epitaxy in Ba-irradiated α-quartz -: art. no. 014910 [J].

Dhar, S ;

Sahoo, PK ;

Gaasiorek, S ;

Vetter, U ;

Kulkarni, VN ;

Lieb, KP .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (01)

[8]

Cathodoluminescence versus dynamical epitaxy of Ba-ion irradiated α-quartz [J].

Dhar, S ;

Gaasiorek, S ;

Sahoo, PK ;

Vetter, U ;

Hofsäss, H ;

Kulkarni, VN ;

Lieb, KP .

APPLIED PHYSICS LETTERS, 2004, 85 (08) :1341-1343

[9]

Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films [J].

Ding, L. ;

Chen, T. P. ;

Wong, J. I. ;

Yang, M. ;

Liu, Y. ;

Ng, C. Y. ;

Liu, Y. C. ;

Tung, C. H. ;

Trigg, A. D. ;

Fung, S. .

APPLIED PHYSICS LETTERS, 2006, 89 (25)

[10]

Optical properties of silicon nanocrystals embedded in a SiO2 matrix -: art. no. 125419 [J].

Ding, L ;

Chen, TP ;

Liu, Y ;

Ng, CY ;

Fung, S .

PHYSICAL REVIEW B, 2005, 72 (12)

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