Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers

被引：16

作者：

Huang, R. ^{[1
,2
,3
]}

Wang, D. Q. ^{[1
,2
]}

Ding, H. L. ^{[3
]}

Wang, X. ^{[3
]}

Chen, K. J. ^{[1
,2
]}

Xu, J. ^{[1
,2
]}

Guo, Y. Q. ^{[3
]}

Song, J. ^{[3
]}

Ma, Z. Y. ^{[1
,2
]}

机构：

[1] Nanjing Univ, State Key Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[3] Hanshan Normal Univ, Dept Phys & Elect Engn, Chaozhou 521041, Guangdong, Peoples R China

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 02期

基金：

中国国家自然科学基金;

关键词：

SILICON-NITRIDE FILMS; QUANTUM CONFINEMENT; NANOCRYSTALS; LUMINESCENCE; EFFICIENCY; DEVICES; DOTS;

D O I：

10.1364/OE.18.001144

中图分类号：

O43 [光学];

学科分类号：

070207 [光学];

摘要：

Luminescent SiN-based multilayers were prepared in a plasma enhanced chemical vapor deposition system followed by subsequently laser crystallization of ultrathin amorphous Si-rich SiN sublayers. The cross-sectional TEM analysis reveals that grain size of Si nanocrystals embedded in the Si-rich SiN sublayers is independent of the laser fluence, while the grain density can be well controlled by the laser fluence. The devices containing the laser crystallized multilayers show a low turn-on voltage of 5 V and exhibit strong green light emission under both optical and electrical excitations. Moreover, the device after laser-irradiated at 554 mJ/cm(2) shows a significantly enhanced EL intensity as well as external quantum efficiency compared with the device without laser irradiation. The EL mechanism is suggested from the bipolar recombination of electron-hole pairs at Si nanocrystals. The improved performance of the devices was discussed. (C) 2009 Optical Society of America

引用

页码：1144 / 1150

页数：7

共 24 条

[1]

Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions [J].