Electroluminescence from Si-rich SiNx/N-rich SiNy multilayer light-emitting devices

被引：4

作者：

Huang Rui ^{[1
,2
,3
]}

Dong Heng-Ping ^{[1
,2
]}

Wang Dan-Qing ^{[1
,2
]}

Chen Kun-Ji ^{[1
,2
]}

Ding Hong-Lin ^{[1
,2
]}

Xu Jun ^{[1
,2
]}

Li Wei ^{[1
,2
]}

Ma Zhong-Yuan ^{[1
,2
]}

机构：

[1] Nanjing Univ, State Key Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[3] Hanshan Normal Univ, Dept Phys & Elect Engn, Chaozhou 521041, Peoples R China

来源：

ACTA PHYSICA SINICA | 2009年 / 58卷 / 03期

基金：

中国国家自然科学基金;

关键词：

electroluminescence; multilayer; silicon nitride; VISIBLE PHOTOLUMINESCENCE;

D O I：

10.7498/aps.58.2072

中图分类号：

O4 [物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

SiN-based multilayer light-emitting devices, which employed Si-rich SiNx/N-rich SiNy multilayer as luminescence active layer, were fabricated by plasma enhanced chemical vapor deposition (PECVD). Strong visible electroluminescence (EL) from the devices was observed at room temperature. By adjusting the SUN ratio of the barrier layer, the effect of barrier on the electroluminescence properties was further investigated. The experimental results show that the performance of the devices can be significantly improved by controlling the Si/N ratio of the barrier layer.

引用

收藏

页码：2072 / 2076

页数：5

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