Ordering and self-organization in nanocrystalline silicon

被引:211
作者
Grom, GF
Lockwood, DJ
McCaffrey, JP
Labbé, HJ
Fauchet, PM
White, B
Diener, J
Kovalev, D
Koch, F
Tsybeskov, L [1 ]
机构
[1] Univ Rochester, Dept Elect & Comp Engn, Nanoscale Silicon Res Initiat, Rochester, NY 14618 USA
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[3] Motorola DigitalDNA Labs, Austin, TX USA
[4] Tech Univ Munich, Phys Dept E16, D-85747 Garching, Germany
关键词
D O I
10.1038/35030062
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The spontaneous formation of organized nanocrystals in semiconductors has been observed(1-5) during heteroepitaxial growth and chemical synthesis. The ability to fabricate size-controlled silicon nanocrystals encapsulated by insulating SiO2 would be of significant interest to the microelectronics industry. But reproducible manufacture of such crystals is hampered by the amorphous nature of SiO2 and the differing thermal expansion coefficients of the two materials. Previous attempts(6-10) to fabricate Si nanocrystals failed to achieve control over their shape and crystallographic orientation, the latter property being important in systems such as Si quantum dots. Here we report the self-organization of Si nanocrystals larger than 80 Angstrom into brick-shaped crystallites oriented along the [111] crystallographic direction. The nanocrystals are formed by the solid-phase crystallization of nanometre-thick layers of amorphous Si confined between SiO2 layers. The shape and orientation of the crystallites results in relatively narrow photoluminescence, whereas isotropic particles produce qualitatively different, broad light emission. Our results should aid the development of maskless, reproducible Si nanofabrication techniques.
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页码:358 / 361
页数:5
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