Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters

被引：7

作者：

Iechi, Hiroyuki ^{[1
,2
]}

Watanabe, Yasuyuki ^{[3
]}

Yamauchi, Hiroshi ^{[4
]}

Kudo, Kazuhiro ^{[2
]}

机构：

[1] Ricoh Co Ltd, Adv Technol R&D Ctr, Yokohama, Kanagawa 2240035, Japan

[2] Chiba Univ, Grad Sch Engn, Chiba 2638522, Japan

[3] Chiba Univ, Ctr Frontier Sci, Chiba 2638522, Japan

[4] Chiba Univ, Fac Engn, Chiba 2638522, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2008年 / E91C卷 / 12期

关键词：

pentacene; zinc oxide; sputter; field effect transistor; interface; CMOS inverter; organic logic circuit;

D O I：

10.1093/ietele/e91-c.12.1843

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8 - 12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags. and others.

引用

页码：1843 / 1847

页数：5

共 17 条

[1] Pentacene-based radio-frequency identification circuitry [J].

Baude, PF ;

Ender, DA ;

Haase, MA ;

Kelley, TW ;

Muyres, DV ;

Theiss, SD .

APPLIED PHYSICS LETTERS, 2003, 82 (22) :3964-3966

[2] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH ;

Nunes, G .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1117-1119

[3] Organic oscillator and adaptive amplifier circuits for chemical vapor sensing [J].

Crone, BK ;

Dodabalapur, A ;

Sarpeshkar, R ;

Gelperin, A ;

Katz, HE ;

Bao, Z .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) :10140-10146

[4] Complementary circuits with organic transistors [J].

Dodabalapur, A ;

Laquindanum, J ;

Katz, HE ;

Bao, Z .

APPLIED PHYSICS LETTERS, 1996, 69 (27) :4227-4229

[5] Hybrid organic inorganic complementary circuits [J].

Dodabalapur, A ;

Baumbach, J ;

Baldwin, K ;

Katz, HE .

APPLIED PHYSICS LETTERS, 1996, 68 (16) :2246-2248

[6] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

[7] Inverter circuits using pentacene and ZnO transistors [J].

Iechi, Hiroyuki ;

Watanabe, Yasuyuki ;

Kudo, Kazuhiro .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B) :2645-2649

[8]

Inoue Y, 2005, JPN J APPL PHYS 1, V44, P3663, DOI 10.1143/JJAP.44.3663

[9] High mobility of pentacene field-effect transistors with polyimide gate dielectric layers [J].

Kato, Y ;

Iba, S ;

Teramoto, R ;

Sekitani, T ;

Someya, T ;

Kawaguchi, H ;

Sakurai, T .

APPLIED PHYSICS LETTERS, 2004, 84 (19) :3789-3791

[10]

KLARK H, 1999, IEEE ELECTR DEVICE L, V20, P289

← 1 2 →