High-temperature ferromagnetism in Zn1-xMnxO semiconductor thin films

被引：55

作者：

Theodoropoulou, N

Misra, V

Philip, J

LeClair, P

Berera, GP

Moodera, JS

Satpati, B

Som, T

机构：

[1] MIT, Francis Bitter Natl Magnet Lab, Cambridge, MA 02139 USA

[2] Inst Phys, Bhubaneswar 751005, Orissa, India

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2006年 / 300卷 / 02期

基金：

美国国家科学基金会;

关键词：

spintronics; magnetic semiconductors;

D O I：

10.1016/j.jmmm.2005.05.039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Clear evidence of ferromagnetic behavior at temperatures > 400 K as well as spin polarization of the charge carriers have been observed in Zn1-xMnxO thin films grown oil Al2O3 and MgO substrates. The magnetic propel-ties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8 mu(B)/Mn at 350K., the highest moment yet reported for any Mn doped magnetic semiconductor. Anomalous Hall effect shows that the charge carriers (electrons) are spin-polarized and participate in the observed ferromagnetic behavior. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：407 / 411

页数：5

共 19 条

[1] Magnetic properties of epitaxial Mn-doped ZnO thin films [J].