Ferromagnetism and high Curie temperature in semiconductor heterostructures with Mn δ-doped GaAs and p-type selective doping -: art. no. 241308

被引：214

作者：

Nazmul, AM

Sugahara, S

Tanaka, M

机构：

[1] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Japan Sci & Technol Corp, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.67.241308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interaction between the magnetic dopants (Mn) and 2-dimensional hole gas (2DHG) in Mn delta-doped GaAs/Be-doped p-type AlGaAs heterostructures, where holes were supplied from the Be-doped AlGaAs to the Mn delta-doped GaAs, realized ferromagnetic ordering. The Curie temperature T-C of the heterostructure prepared with suitable growth conditions was 172 K, highest among the T-C values reported in III-V (InAs, GaAs) magnetic semiconductors.

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页数：4

相关论文

共 26 条

[1] HOLE SUBBAND AT GAAS/ALGAAS HETEROJUNCTIONS AND QUANTUM WELLS [J].

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1985, 54 (04) :1528-1536

[2]

Berger L., 1980, Hall effect and its applications. Proceedings of the commemorative symposium, P55

[3] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[4] High-Curie-temperature Ga1-xMnxAs obtained by resistance-monitored annealing [J].

Edmonds, KW ;

Wang, KY ;

Campion, RP ;

Neumann, AC ;

Farley, NRS ;

Gallagher, BL ;

Foxon, CT .

APPLIED PHYSICS LETTERS, 2002, 81 (26) :4991-4993

[5] DILUTED MAGNETIC SEMICONDUCTORS [J].

FURDYNA, JK .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :R29-R64

[6] Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors [J].

Katsumoto, S ;

Hayashi, T ;

Hashimoto, Y ;

Iye, Y ;

Ishiwata, Y ;

Watanabe, M ;

Eguchi, R ;

Takeuchi, T ;

Harada, Y ;

Shin, S ;

Hirakawa, K .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 84 (1-2) :88-95

[7] (Ga,Mn)As as a digital ferromagnetic heterostructure [J].

Kawakami, RK ;

Johnston-Halperin, E ;

Chen, LF ;

Hanson, M ;

Guébels, N ;

Speck, JS ;

Gossard, AC ;

Awschalom, AA .

APPLIED PHYSICS LETTERS, 2000, 77 (15) :2379-2381

[8] Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers [J].

Ku, KC ;

Potashnik, SJ ;

Wang, RF ;

Chun, SH ;

Schiffer, P ;

Samarth, N ;

Seong, MJ ;

Mascarenhas, A ;

Johnston-Halperin, E ;

Myers, RC ;

Gossard, AC ;

Awschalom, DD .

APPLIED PHYSICS LETTERS, 2003, 82 (14) :2302-2304

[9] Transport properties and origin of ferromagnetism in (Ga,Mn)As [J].

Matsukura, F ;

Ohno, H ;

Shen, A ;

Sugawara, Y .

PHYSICAL REVIEW B, 1998, 57 (04) :R2037-R2040

[10] DILUTED MAGNETIC III-V SEMICONDUCTORS [J].

MUNEKATA, H ;

OHNO, H ;

VONMOLNAR, S ;

SEGMULLER, A ;

CHANG, LL ;

ESAKI, L .

PHYSICAL REVIEW LETTERS, 1989, 63 (17) :1849-1852