Size and environment dependence of surface phonon modes of gallium arsenide nanowires as measured by Raman spectroscopy

被引：69

作者：

Spirkoska, D. ^{[1
]}

Abstreiter, G. ^{[1
]}

i Morral, A. Fontcuberta ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 43期

关键词：

D O I：

10.1088/0957-4484/19/43/435704

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Gallium arsenide nanowires were synthesized by gallium-assisted molecular beam epitaxy. By varying the growth time, nanowires with diameters ranging from 30 to 160 nm were obtained. Raman spectra of the nanowire ensembles were measured. The small linewidth of the optical phonon modes agree with an excellent crystalline quality. A surface phonon mode was also revealed, as a shoulder at lower frequencies of the longitudinal optical mode. In agreement with the theory, the surface mode shifts to lower wavenumbers when the diameter of the nanowires is decreased or the environment dielectric constant increased.

引用

页数：4

共 18 条

[1] Raman scattering as a probe of phonon confinement and surface optical modes in semiconducting nanowires [J].

Adu, K. W. ;

Xiong, Q. ;

Gutierrez, H. R. ;

Chen, G. ;

Eklund, P. C. .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 85 (03) :287-297

[2] Structure of twins in GaAs nanowires grown by the vapour-liquid-solid process [J].

Banerjee, R. ;

Bhattacharya, A. ;

Genc, A. ;

Arora, B. M. .

PHILOSOPHICAL MAGAZINE LETTERS, 2006, 86 (12) :807-816

[3] ELECTRON AND HOLE CAPTURE AT AU AND PT CENTERS IN SILICON [J].

BROTHERTON, SD ;

LOWTHER, JE .

PHYSICAL REVIEW LETTERS, 1980, 44 (09) :606-609

[4]

CARDONA M, 1982, LIGHT SCATTERING SOL, P45420

[5] Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy [J].

Colombo, C. ;

Spirkoska, D. ;

Frimmer, M. ;

Abstreiter, G. ;

Morral, A. Fontcuberta I. .

PHYSICAL REVIEW B, 2008, 77 (15)

[6] Single-electron tunneling in InP nanowires [J].

De Franceschi, S ;

van Dam, JA ;

Bakkers, EPAM ;

Feiner, LF ;

Gurevich, L ;

Kouwenhoven, LP .

APPLIED PHYSICS LETTERS, 2003, 83 (02) :344-346

[7] Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires [J].

Fontcuberta i Morral, Anna ;

Spirkoska, Dance ;

Arbiol, Jordi ;

Heigoldt, Matthias ;

Morante, Joan Ranion ;

Abstreiter, Gerhard .

SMALL, 2008, 4 (07) :899-903

[8] Surface optical phonions in gallium phosphide nanowires [J].

Gupta, R ;

Xiong, Q ;

Mahan, GD ;

Eklund, PC .

NANO LETTERS, 2003, 3 (12) :1745-1750

[9] Confinement effects on optical phonons in polar tetrapod nanocrystals detected by resonant inelastic light scattering [J].

Krahne, R ;

Chilla, G ;

Schüller, C ;

Carbone, L ;

Kudera, S ;

Mannarini, G ;

Manna, L ;

Heitmann, D ;

Cingolani, R .

NANO LETTERS, 2006, 6 (03) :478-482

[10] One-dimensional hole gas in germanium/silicon nanowire heterostructures [J].

Lu, W ;

Xiang, J ;

Timko, BP ;

Wu, Y ;

Lieber, CM .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2005, 102 (29) :10046-10051

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