Electrical properties of Si nanocrystals embedded in an ultrathin oxide

被引：55

作者：

Maeda, T ^{[1
]}

Suzuki, E ^{[1
]}

Sakata, I ^{[1
]}

Yamanaka, M ^{[1
]}

Ishii, K ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

NANOTECHNOLOGY | 1999年 / 10卷 / 02期

关键词：

D O I：

10.1088/0957-4484/10/2/304

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigate Si nanocrystals fabricated by the rapid thermal oxidation (RTO) of an ultrathin chemical vapour deposition (CVD) amorphous Si (a-Si:H) film. It is found from the transmission electron microscope (TEM) observation that the ultrathin RTO film contains Si nanocrystals of around or less than 5 nm in size. The dynamic electrical conduction measurement of the RTO diode structure including the Si nanocrystals reveals novel features such as the N-shaped tunnel current versus gate voltage characteristics and the hysteresis. It is also found that the gate voltages at the first and second current rise are fixed and the current reduction in the fixed time interval is observed at the constant gate voltage. These findings can be explained by the fixed-amount electron charging effect at the Si nanocrystals and the consequent screening effect on the tunnel current flowing through the diode structure.

引用

页码：127 / 131

页数：5

共 13 条

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