Analysis of a conducting channel at the native zinc oxide surface

被引:59
作者
Schmidt, O
Geis, A
Kiesel, P
Van de Walle, CG
Johnson, NM
Bakin, A
Waag, A
Döhler, GH
机构
[1] Palo Alto Res Ctr Inc, Palo Alto, CA 94304 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[3] Tech Univ Braunschweig, Inst Semicond Technol, D-38106 Braunschweig, Germany
[4] Univ Erlangen Nurnberg, Inst Tech Phys 1, D-91058 Erlangen, Germany
关键词
D O I
10.1016/j.spmi.2005.08.056
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The electrical properties of high-resistivity zinc oxide (ZnO) bulk and epi-samples are strongly influenced by the sample ambient. Bulk samples that are highly resistive in ambient air can be reversibly transformed into a high conducting state under vacuum. As an explanation we suggest a conducting electron channel at the ZnO surface. Under vacuum this channel appears upon annealing. Exposure to ambient air destroys the channel. The channel is evident only for samples showing a high bulk resistivity, and it seems to be the "natural" state of the ZnO surface. We have investigated a variety of surface passivation layers and coatings in order to preserve or avoid the surface conducting channel under either environment. Appropriate coatings that preserve the surface conducting channel have been used for fabrication of MOS structures. We investigated the nature of the conducting channel by modulating the free carrier concentration at the surface. (C) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:8 / 16
页数:9
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