Epitaxially Stabilized EuMoO3: A New Itinerant Ferromagnet

被引:21
作者
Kozuka, Yusuke [1 ,2 ]
Seki, Hidenobu [1 ,2 ]
Fujita, Takahiro C. [1 ,2 ]
Chakraverty, Suvankar [4 ]
Yoshimatsu, Kohei [3 ]
Kumigashira, Hiroshi [5 ,6 ]
Oshima, Masaharu [3 ]
Bahramy, Mohammad S. [4 ]
Arita, Ryotaro [1 ,2 ,6 ]
Kawasaki, Masashi [1 ,2 ,4 ]
机构
[1] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[2] Univ Tokyo, QPEC, Tokyo 1138656, Japan
[3] Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan
[4] RIKEN, CERG, Adv Sci Inst, Wako, Saitama 3510198, Japan
[5] High Energy Accelerator Org KEK, Inst Mat Struct Sci, Photon Factory & Condensed Matter Res Ctr, Tsukuba, Ibaraki 3050801, Japan
[6] Japan Sci & Technol Agcy JST, PRESTO, Chiyoda Ku, Tokyo 1020075, Japan
基金
日本学术振兴会;
关键词
nonequilibrium phases; perovskite; magnetic metal; DIVALENT EUROPIUM; OXIDES; PHASES;
D O I
10.1021/cm302231k
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Synthesizing metastable phases often open new functions in materials, but it is a challenging topic. Thin film techniques have advantages to form materials which do not exist in nature since nonequilibrium processes are frequently utilized. In this study, we successfully synthesize an epitaxially stabilized new compound of perovskite Eu2+Mo4+O3 as a thin film form by a pulsed laser deposition. The analogous perovskite SrMoO3 is a highly conducting paramagnetic material, but Eu2+ and Mo4+ are not compatible in equilibrium, and a previous study found that the more stable pyrochlore Eu23+Mo24+O7 prefers to form. By using isostructural perovskite substrates, the gain of the interface energy between the film and the substrate stabilizes the matastable EuMoO3 phase. This compound exhibits high conductivity and large magnetic moment, originating from Mo 4d(2) electrons and Eu 4f(7) electrons, respectively. Our result indicates the epitaxial stabilization is effective not only to stabilize crystallographic structures but also to form a new compound which contains unstable combinations of ionic valences in bulk form.
引用
收藏
页码:3746 / 3750
页数:5
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