Negative differential thermal resistance and thermal transistor

被引:574
作者
Li, BW [1 ]
Wang, L
Casati, G
机构
[1] Natl Univ Singapore, Dept Phys, Singapore 117546, Singapore
[2] Natl Univ Singapore, Ctr Computat Sci & Engn, Singapore 117542, Singapore
[3] Nanjing Univ, Inst Acoust, Lab Modern Acoust, Nanjing 210093, Peoples R China
[4] NUS, Grad Sch Integrat Sci & Engn, Singapore 117597, Singapore
[5] Natl Univ Singapore, Dept Phys, Singapore 117546, Singapore
[6] Natl Univ Singapore, Ctr Computat Sci & Engn, Singapore 117542, Singapore
[7] Univ Insubria, Int Ctr Nonlinear & Complex Syst, I-22100 Como, Italy
[8] Ist Nazl Fis Nucl, Sez Milano, I-20133 Milan, Italy
[9] INFM, Unita Como, I-22100 Como, Italy
关键词
D O I
10.1063/1.2191730
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the first model of a thermal transistor to control heat flow. Like its electronic counterpart, our thermal transistor is a three-terminal device with the important feature that the current through the two terminals can be controlled by small changes in the temperature or in the current through the third terminal. This control feature allows us to switch the device between "off" (insulating) and "on" (conducting) states or to amplify a small current. The thermal transistor model is possible because of the negative differential thermal resistance. (c) 2006 American Institute of Physics.
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页数:3
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