Layered semiconductor molybdenum disulfide nanomembrane based Schottky-barrier solar cells

被引:212
作者
Shanmugam, Mariyappan [1 ]
Durcan, Chris A. [1 ]
Yu, Bin [1 ]
机构
[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA
关键词
C-V CHARACTERISTICS; AMORPHOUS-CARBON; JUNCTION; NANOTUBE;
D O I
10.1039/c2nr32394j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate Schottky-barrier solar cells employing a stack of layer-structured semiconductor molybdenum disulfide (MoS2) nanomembranes, synthesized by the chemical-vapor-deposition method, as the critical photoactive layer. An MoS2 nanomembrane forms a Schottky-barrier with a metal contact by the layer-transfer process onto an indium tin oxide (ITO) coated glass substrate. Two vibrational modes in MoS2 nanomembranes, E-2g(1) (in-plane) and A(1g) (perpendicular-to-plane), were verified by Raman spectroscopy. With a simple stacked structure of ITO-MoS2-Au, the fabricated solar cell demonstrates a photo-conversion efficiency of 0.7% for similar to 110 nm MoS2 and 1.8% for similar to 220 nm MoS2. The improvement is attributed to a substantial increase in photonic absorption. The MoS2 nanomembrane exhibits efficient photo-absorption in the spectral region of 350-950 nm, as confirmed by the external quantum efficiency. A sizable increase in MoS2 thickness results in only minor change in Mott-Schottky behavior, indicating that defect density is insensitive to nanomembrane thickness attributed to the dangling-bond-free layered structure.
引用
收藏
页码:7399 / 7405
页数:7
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