A Novel technique for the fabrication of sub-20nm metallic wires

被引：1

作者：

Hoole, ACF

Broers, AN

机构：

[1] Department of Engineering, University of Cambridge, Cambridge, CB2 1PZ, Trumpington Street

来源：

MICROELECTRONIC ENGINEERING | 1996年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00289-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Continuos metallic wires similar to 10nm in width have been fabricated. These have been achieved using a new technique which exploits the ability to form ultra fine trenches in the surface of a SiO2 layer using the irradiated SiO2 process. The complete process is described along with simulations of the process which enable the process to be optimised.

引用

页码：467 / 470

页数：4

共 7 条

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