A Novel technique for the fabrication of sub-20nm metallic wires

被引:1
作者
Hoole, ACF
Broers, AN
机构
[1] Department of Engineering, University of Cambridge, Cambridge, CB2 1PZ, Trumpington Street
关键词
D O I
10.1016/0167-9317(95)00289-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Continuos metallic wires similar to 10nm in width have been fabricated. These have been achieved using a new technique which exploits the ability to form ultra fine trenches in the surface of a SiO2 layer using the irradiated SiO2 process. The complete process is described along with simulations of the process which enable the process to be optimised.
引用
收藏
页码:467 / 470
页数:4
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