Strain-balanced AlGaInAs/InP heterostructures with up to 50 QWs by MBE

被引：3

作者：

Hillmer, H

Losch, R

Schlapp, W

机构：

[1] Deutsche Telekom, Technologiezentrum, P.O. Box 100003

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

关键词：

QUANTUM-WELLS; LAYER STRUCTURES; LASER STRUCTURES; PHOTOLUMINESCENCE; DYNAMICS; CARRIER;

D O I：

10.1016/S0022-0248(96)00825-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Using solid-source MBE, strain-balanced quaternary AlGaInAs/AlGaInAs multiple quantum well (MQW) structures have been grown and studied by photoluminescence (PL) and X-ray diffraction (XRD) measurements, showing high epitaxial quality and excellent homogeneity in growth direction. The PL linewidths are low and almost independent of the number of QWs (1 less than or equal to N-QW less than or equal to 50). With respect to photonic device applications at 1.55 mu m, structures with quaternary QWs seem to be superior compared to structures with ternary QWs: structures with quaternary QWs enable more degrees of freedom in device design and reveal a five times larger lateral wafer area in which the PL wavelength is constant.

引用

页码：1120 / 1125

页数：6

共 20 条

[1] PHOTOLUMINESCENCE AND X-RAY-DIFFRACTION STUDIES OF MBE-GROWN COMPRESSIVELY STRAINED INGAAS AND INGAALAS QUANTUM-WELLS FOR 1.55 MU-M LASER-DIODE APPLICATIONS [J].