ELIMINATION OF WAVY LAYER GROWTH PHENOMENA IN STRAIN-COMPENSATED GAINASP/GAINASP MULTIPLE-QUANTUM-WELL STACKS

被引：26

作者：

GLEW, RW ^{[1
]}

SCARROTT, K ^{[1
]}

BRIGGS, ATR ^{[1
]}

SMITH, AD ^{[1
]}

WILKINSON, VA ^{[1
]}

ZHOU, X ^{[1
]}

SILVER, M ^{[1
]}

机构：

[1] UNIV SURREY,DEPT PHYS,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 145卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)91140-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A fifty period multiple quantum well stack composed of alternating layers of GaInAsP (100 Angstrom, +1% lattice mismatch) and GaInAsP (100 Angstrom -1% lattice mismatch) has been grown with a minimum of strain relaxation. The strain-compensated structure was over 1 mu m thick, exhibited an excellent high resolution X-ray diffraction rocking curve and had a low temperature photoluminescence linewidth of only 6 meV. The growth of this structure was made possible by suppressing the wavy layer growth phenomena. The onset of wavy layer growth can be delayed by using a high V/III ratio in the gas phase and by choosing a growth temperature high enough for the barrier composition to lie outside the Ga-In-As-P miscibility limit isotherm.

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页码：764 / 770

页数：7

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