HIGHLY THERMALLY STABLE, HIGH-PERFORMANCE INGAASP - INGAASP MULTI-QUANTUM-WELL STRUCTURES FOR OPTICAL-DEVICES BY ATMOSPHERIC-PRESSURE MOVPE

被引：51

作者：

MIRCEA, A

OUGAZZADEN, A

PRIMOT, G

KAZMIERSKI, C

机构：

[1] Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, F-92220 Bagneux

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90544-S

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A novel structure of the active region of multiple quantum well (MQW) InGaAsP lasers at 1.55 mum is proposed. Both barriers and wells have the same group V (As/P) composition. This minimizes the thermal intermixing problems encountered with more conventional structures. The specific band structure associated with this design (loose hole confinement, strong electron confinement) may also lead to specific, favorable device characteristics such as, for instance, high-speed intensity modulation capability.

引用

页码：737 / 740

页数：4

共 8 条

[1]

BARRAU J, COMMUNICATION

[2] GAIN AND THRESHOLD CHARACTERISTICS OF STRAIN-COMPENSATED MULTIPLE-QUANTUM-WELL LASERS [J].

BRIGGS, ATR ;

GREENE, PD ;

JOWETT, JM .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (05) :423-425

[3] MACROSCOPIC MECHANISM OF GROUP-V INTERDIFFUSION IN UNDOPED INGAAS/INP QUANTUM-WELLS GROWN BY MOVPE [J].

FUJII, T ;

SUGAWARA, M ;

YAMAZAKI, S ;

NAKAJIMA, K .

JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) :348-352

[4]

MCILROY PWA, 1985, IEEE J QUANTUM ELECT, V21, P1958, DOI 10.1109/JQE.1985.1072606

[5] VERY UNIFORM EPITAXY [J].

MIRCEA, A ;

OUGAZZADEN, A ;

MELLET, R .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1989, 19 (1-2) :39-49

[6] LOW-THRESHOLD-CURRENT-DENSITY 1.5-MU-M LASERS USING COMPRESSIVELY STRAINED INGAASP QUANTUM-WELLS [J].

OSINSKI, JS ;

ZOU, Y ;

GRODZINSKI, P ;

MATHUR, A ;

DAPKUS, PD .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (01) :10-13

[7]

STARCK C, 1992, FOURTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, P457, DOI 10.1109/ICIPRM.1992.235565

[8] LOGARITHMIC GAIN CURRENT-DENSITY CHARACTERISTIC OF INGAAS/INGAALAS/INP MULTI-QUANTUM-WELL SEPARATE-CONFINEMENT-HETEROSTRUCTURE LASERS [J].

WHITEAWAY, JEA ;

THOMPSON, GHB ;

GREENE, PD ;

GLEW, RW .

ELECTRONICS LETTERS, 1991, 27 (04) :340-342

← 1 →