Strain-balanced AlGaInAs/InP heterostructures with up to 50 QWs by MBE

Using solid-source MBE, strain-balanced quaternary AlGaInAs/AlGaInAs multiple quantum well (MQW) structures have been grown and studied by photoluminescence (PL) and X-ray diffraction (XRD) measurements, showing high epitaxial quality and excellent homogeneity in growth direction. The PL linewidths are low and almost independent of the number of QWs (1 less than or equal to N-QW less than or equal to 50). With respect to photonic device applications at 1.55 mu m, structures with quaternary QWs seem to be superior compared to structures with ternary QWs: structures with quaternary QWs enable more degrees of freedom in device design and reveal a five times larger lateral wafer area in which the PL wavelength is constant.