Atomic structure of the Si(113)-(3 x 1) surface: Charge transfer within tetramers

被引:13
作者
Hwang, CC [1 ]
Kim, HS
Kim, YK
Kim, JS
Park, CY
Kim, KJ
Kang, TH
Kim, B
机构
[1] Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Inst Basic Sci, Suwon 440746, South Korea
[3] Pohang Accelerator Lab, Pohang 790784, South Korea
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 23期
关键词
D O I
10.1103/PhysRevB.59.14864
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Atomic structure of the Si(113)3 x 1 surface was investigated by using synchrotron radiation photoemission spectroscopy. The Si 2p core-level spectra were measured at surface-sensitive photon energy, 132 eV. From the fitting of the Si 2p core-level spectrum for the Si(113)3 x 1 surface, three surface components were resolved at binding energies of about 0.745, - 0.554, and 0.34 eV, respectively. The fitting results show that the dimers receive about 0.16 electrons and the rest of tetramers donate about 0.22 electrons on the Si(113)3 x 1 surface. This strongly supports the fact that the dimers and the rest of the tetramers are relaxed upward and downward, respectively, on Ranke's model.
引用
收藏
页码:14864 / 14867
页数:4
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