学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
OMVPE growth of AlGaInP for high-efficiency visible light-emitting diodes
被引:18
作者
:
Chen, CH
论文数:
0
引用数:
0
h-index:
0
机构:
Hewlett Packard Corp, Div Optoelect, San Jose, CA 95131 USA
Hewlett Packard Corp, Div Optoelect, San Jose, CA 95131 USA
Chen, CH
[
1
]
Stockman, SA
论文数:
0
引用数:
0
h-index:
0
机构:
Hewlett Packard Corp, Div Optoelect, San Jose, CA 95131 USA
Hewlett Packard Corp, Div Optoelect, San Jose, CA 95131 USA
Stockman, SA
[
1
]
Peanasky, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
Hewlett Packard Corp, Div Optoelect, San Jose, CA 95131 USA
Hewlett Packard Corp, Div Optoelect, San Jose, CA 95131 USA
Peanasky, MJ
[
1
]
Kuo, CP
论文数:
0
引用数:
0
h-index:
0
机构:
Hewlett Packard Corp, Div Optoelect, San Jose, CA 95131 USA
Hewlett Packard Corp, Div Optoelect, San Jose, CA 95131 USA
Kuo, CP
[
1
]
机构
:
[1]
Hewlett Packard Corp, Div Optoelect, San Jose, CA 95131 USA
来源
:
HIGH BRIGHTNESS LIGHT EMITTING DIODES
|
1997年
/ 48卷
关键词
:
D O I
:
10.1016/S0080-8784(08)62405-9
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
[No abstract available]
引用
收藏
页码:97 / 148
页数:52
相关论文
共 115 条
[1]
MG DOPING OF INP AND INGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY USING BIS-CYCLOPENTADIENYL MAGNESIUM
ABERNATHY, CR
论文数:
0
引用数:
0
h-index:
0
机构:
ATandT Bell Laboratories, Murray Hill
ABERNATHY, CR
WISK, PW
论文数:
0
引用数:
0
h-index:
0
机构:
ATandT Bell Laboratories, Murray Hill
WISK, PW
PEARTON, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
ATandT Bell Laboratories, Murray Hill
PEARTON, SJ
REN, F
论文数:
0
引用数:
0
h-index:
0
机构:
ATandT Bell Laboratories, Murray Hill
REN, F
[J].
APPLIED PHYSICS LETTERS,
1993,
62
(03)
: 258
-
260
[2]
ALKYL EXCHANGE EFFECTS BETWEEN TRIETHYLINDIUM AND TRIMETHYLGALLIUM
AGNELLO, PD
论文数:
0
引用数:
0
h-index:
0
AGNELLO, PD
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
[J].
JOURNAL OF CRYSTAL GROWTH,
1989,
94
(02)
: 311
-
320
[3]
Amano H., 1989, I PHYS C SER, V106, P725
[4]
PASSIVATION OF ZINC ACCEPTORS IN INP BY ATOMIC-HYDROGEN COMING FROM ARSINE DURING METALORGANIC VAPOR-PHASE EPITAXY
ANTELL, GR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
ANTELL, GR
BRIGGS, ATR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
BRIGGS, ATR
BUTLER, BR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
BUTLER, BR
KITCHING, SA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
KITCHING, SA
STAGG, JP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
STAGG, JP
CHEW, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
CHEW, A
SYKES, DE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
SYKES, DE
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(09)
: 758
-
760
[5]
ARCHER RJ, 1972, J ELECT MAT, V1, P1
[6]
BARNARD JE, 1988, PHYS REV B, V38, P6338
[7]
HIGH-POWER (1.4W) ALGAINP GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE VISIBLE (LAMBDA-APPROXIMATELY-658-NM) LASER
BOUR, DP
论文数:
0
引用数:
0
h-index:
0
BOUR, DP
SHEALY, JR
论文数:
0
引用数:
0
h-index:
0
SHEALY, JR
[J].
APPLIED PHYSICS LETTERS,
1987,
51
(21)
: 1658
-
1660
[8]
BOUR DP, 1987, THESIS CORNELL U ITH
[9]
EFFECT OF GROWTH-RATE ON PROPERTIES OF GA0.51IN0.49P GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
CAO, DS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
CAO, DS
REIHLEN, EH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
REIHLEN, EH
CHEN, GS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
CHEN, GS
KIMBALL, AW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
KIMBALL, AW
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
STRINGFELLOW, GB
[J].
JOURNAL OF CRYSTAL GROWTH,
1991,
109
(1-4)
: 279
-
284
[10]
ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF (ALXGA1-X)0.51IN0.49P (X FROM 0 TO 1) USING TRIMETHYLALKYLS
CAO, DS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
CAO, DS
KIMBALL, AW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
KIMBALL, AW
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
STRINGFELLOW, GB
[J].
JOURNAL OF APPLIED PHYSICS,
1990,
67
(02)
: 739
-
744
←
1
2
3
4
5
6
7
8
9
10
→
共 115 条
[1]
MG DOPING OF INP AND INGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY USING BIS-CYCLOPENTADIENYL MAGNESIUM
ABERNATHY, CR
论文数:
0
引用数:
0
h-index:
0
机构:
ATandT Bell Laboratories, Murray Hill
ABERNATHY, CR
WISK, PW
论文数:
0
引用数:
0
h-index:
0
机构:
ATandT Bell Laboratories, Murray Hill
WISK, PW
PEARTON, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
ATandT Bell Laboratories, Murray Hill
PEARTON, SJ
REN, F
论文数:
0
引用数:
0
h-index:
0
机构:
ATandT Bell Laboratories, Murray Hill
REN, F
[J].
APPLIED PHYSICS LETTERS,
1993,
62
(03)
: 258
-
260
[2]
ALKYL EXCHANGE EFFECTS BETWEEN TRIETHYLINDIUM AND TRIMETHYLGALLIUM
AGNELLO, PD
论文数:
0
引用数:
0
h-index:
0
AGNELLO, PD
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
[J].
JOURNAL OF CRYSTAL GROWTH,
1989,
94
(02)
: 311
-
320
[3]
Amano H., 1989, I PHYS C SER, V106, P725
[4]
PASSIVATION OF ZINC ACCEPTORS IN INP BY ATOMIC-HYDROGEN COMING FROM ARSINE DURING METALORGANIC VAPOR-PHASE EPITAXY
ANTELL, GR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
ANTELL, GR
BRIGGS, ATR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
BRIGGS, ATR
BUTLER, BR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
BUTLER, BR
KITCHING, SA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
KITCHING, SA
STAGG, JP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
STAGG, JP
CHEW, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
CHEW, A
SYKES, DE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND
SYKES, DE
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(09)
: 758
-
760
[5]
ARCHER RJ, 1972, J ELECT MAT, V1, P1
[6]
BARNARD JE, 1988, PHYS REV B, V38, P6338
[7]
HIGH-POWER (1.4W) ALGAINP GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE VISIBLE (LAMBDA-APPROXIMATELY-658-NM) LASER
BOUR, DP
论文数:
0
引用数:
0
h-index:
0
BOUR, DP
SHEALY, JR
论文数:
0
引用数:
0
h-index:
0
SHEALY, JR
[J].
APPLIED PHYSICS LETTERS,
1987,
51
(21)
: 1658
-
1660
[8]
BOUR DP, 1987, THESIS CORNELL U ITH
[9]
EFFECT OF GROWTH-RATE ON PROPERTIES OF GA0.51IN0.49P GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
CAO, DS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
CAO, DS
REIHLEN, EH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
REIHLEN, EH
CHEN, GS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
CHEN, GS
KIMBALL, AW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
KIMBALL, AW
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
STRINGFELLOW, GB
[J].
JOURNAL OF CRYSTAL GROWTH,
1991,
109
(1-4)
: 279
-
284
[10]
ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF (ALXGA1-X)0.51IN0.49P (X FROM 0 TO 1) USING TRIMETHYLALKYLS
CAO, DS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
CAO, DS
KIMBALL, AW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
KIMBALL, AW
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
STRINGFELLOW, GB
[J].
JOURNAL OF APPLIED PHYSICS,
1990,
67
(02)
: 739
-
744
←
1
2
3
4
5
6
7
8
9
10
→