Periodic lattice distortion accompanying the charge-density-wave transition for Sn/Ge(111)

被引:45
作者
Zhang, JD
Ismail
Rous, PJ
Baddorf, AP
Plummer, EW
机构
[1] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
[2] Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA
[3] Univ Maryland, Dept Phys, Baltimore, MD 21228 USA
关键词
D O I
10.1103/PhysRevB.60.2860
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The periodic lattice distortion (PLD) accompanying the charge-density-wave (CDW) transition (at -60 degrees C) in the a phase of Sn on Ge(lll) has been determined by combining the distinct sensitivities of low-energy electron diffraction (LEED) and surface x-ray diffraction (SXRD). New LEED I-V data combined with a SXRD analysis yield a significant lattice distortion. The PLD accompanying the CDW transition is a 0.37-Angstrom vertical rippling of the Sn atoms accompanied by a perpendicular (0.17 Iq) and parallel (0.12 Angstrom) distortion of the first-layer Ge atoms, consistent with a band Jahn-Teller-like distortion. [S0163-1829(99)01128-5].
引用
收藏
页码:2860 / 2863
页数:4
相关论文
共 20 条
[11]   Surface charge density waves at Sn/Ge(111)? [J].
Le Lay, G ;
Aristov, VY ;
Bostrom, O ;
Layet, JM ;
Asensio, MC ;
Avila, J ;
Huttel, Y ;
Cricenti, A .
APPLIED SURFACE SCIENCE, 1998, 123 :440-444
[12]   Fermi surface and electronic structure of Pb/Ge(111) [J].
Mascaraque, A ;
Avila, J ;
Michel, EG ;
Asensio, MC .
PHYSICAL REVIEW B, 1998, 57 (23) :14758-14765
[13]   ADSORBATE REGISTRY AND SUBSURFACE RELAXATION OF THE ALPHA-GE(111) SQUARE-ROOT-3 X SQUARE-ROOT-3-SN/PB RECONSTRUCTIONS [J].
PEDERSEN, JS ;
FEIDENHANSL, R ;
NIELSEN, M ;
KJAER, K ;
GREY, F ;
JOHNSON, RL .
SURFACE SCIENCE, 1987, 189 :1047-1054
[14]   RELIABILITY FACTORS FOR LEED CALCULATIONS [J].
PENDRY, JB .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (05) :937-944
[15]  
RODRIGUEZ JG, UNPUB
[16]   THE TENSOR LEED APPROXIMATION AND SURFACE CRYSTALLOGRAPHY BY LOW-ENERGY ELECTRON-DIFFRACTION [J].
ROUS, PJ .
PROGRESS IN SURFACE SCIENCE, 1992, 39 (01) :3-63
[17]   Metallic charge density waves and surface Mott insulators for adlayer structures on semiconductors: extended Hubbard modeling [J].
Santoro, G ;
Sorella, S ;
Becca, F ;
Scandolo, S ;
Tossatti, E .
SURFACE SCIENCE, 1998, 402 (1-3) :802-807
[18]   First principles calculations of charge and spin density waves of √3-adsorbates on semiconductors [J].
Scandolo, S ;
Ancilotto, F ;
Chiarotti, GL ;
Santoro, G ;
Serra, S ;
Tosatti, E .
SURFACE SCIENCE, 1998, 402 (1-3) :808-812
[19]  
STUMPF R, COMMUNICATION
[20]  
Yeyati AL, 1996, APPL SURF SCI, V104, P248, DOI 10.1016/S0169-4332(96)00152-3