Atomic level smoothing of CVD diamond films by gas cluster ion beam etching

被引：45

作者：

Yoshida, A ^{[1
]}

Deguchi, M ^{[1
]}

Kitabatake, M ^{[1
]}

Hirao, T ^{[1
]}

Matsuo, J ^{[1
]}

Toyoda, N ^{[1
]}

Yamada, I ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,ION BEAM ENGN EXPTL LAB,SAKYO KU,KYOTO 606,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 112卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)01007-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Chemical vapor deposited diamond films on silicon substrates were etched by a gas cluster ion beam, We found that a gas cluster ion beam of 10(17) ions/cm(2) would be effective to smooth the surface of the CVD diamond films. It was confirmed that atomic level smooth surfaces (R(a) = 1.9 nm by AFM measurements) were formed by Ar gas cluster ion beam (Ar-300(+)) etching. We believe that the gas cluster ion beam etching technique will be a key technology for diamond device fabrication.

引用

页码：248 / 251

页数：4

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