REACTIVE ION ETCHING OF DIAMOND

被引:86
作者
SANDHU, GS
CHU, WK
机构
关键词
D O I
10.1063/1.101890
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:437 / 438
页数:2
相关论文
共 4 条
[1]   ION-BEAM-ASSISTED ETCHING OF DIAMOND [J].
EFREMOW, NN ;
GEIS, MW ;
FLANDERS, DC ;
LINCOLN, GA ;
ECONOMOU, NP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :416-418
[2]   HIGH-TEMPERATURE POINT-CONTACT TRANSISTORS AND SCHOTTKY DIODES FORMED ON SYNTHETIC BORON-DOPED DIAMOND [J].
GEIS, MW ;
RATHMAN, DD ;
EHRLICH, DJ ;
MURPHY, RA ;
LINDLEY, WT .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :341-343
[3]   BIPOLAR-TRANSISTOR ACTION IN ION-IMPLANTED DIAMOND [J].
PRINS, JF .
APPLIED PHYSICS LETTERS, 1982, 41 (10) :950-952
[4]   ETCHING OF DIAMOND WITH ARGON AND OXYGEN ION-BEAMS [J].
WHETTEN, TJ ;
ARMSTEAD, AA ;
GRZYBOWSKI, TA ;
RUOFF, AL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :477-480