Study and enhance the photovoltaic properties of narrow-bandgap Cu2SnS3 solar cell by p-n junction interface modification

被引：65

作者：

Chen, Qinmiao ^{[1
,2
]}

Dou, Xiaoming ^{[1
,2
,3
]}

Ni, Yi ^{[2
]}

Cheng, Shuyi ^{[2
]}

Zhuang, Songlin ^{[2
]}

机构：

[1] Shanghai Jiao Tong Univ, Dept Phys, Shanghai 200240, Peoples R China

[2] Univ Shanghai Sci & Technol, Sch Opt Elect & Comp Engn, Shanghai Key Lab Modern Opt Syst, Shanghai 200093, Peoples R China

[3] Waseda Univ, Consolidated Res Inst Adv Sci & Med Care, Shinjuku Ku, Tokyo 1620041, Japan

来源：

JOURNAL OF COLLOID AND INTERFACE SCIENCE | 2012年 / 376卷

关键词：

Narrow-bandgap Cu2SnS3; Photovoltaic properties; p-n junction interface modification; LAYER; FILMS; NANOCRYSTALS; EFFICIENCY;

D O I：

10.1016/j.jcis.2012.03.015

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Photovoltaic properties of narrow-bandgap Cu2SnS3 (CTS) are studied for the first time by employing a superstrate solar cell structure of fluorine-doped tin oxide (FTO) glass/TiO2/ln(2)S(3)/CTS/Mo. The structural, optical, and electronic characteristics of the CTS make it great potential as bottom cell absorber material for low-cost thin film tandem solar cell application. Furthermore, by inserting a thin low temperature deposited ln(2)S(3) layer between the ln(2)S(3) buffer layer and the CTS absorber layer, an enhancement in the performance of the solar cell can be achieved, leading to about 75% improvement (eta = 1.92%) over the unmodified device (eta = 1.10%). (C) 2012 Elsevier Inc. All rights reserved.

引用

页码：327 / 330

页数：4

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