Modified Raman confinement model for Si nanocrystals

被引:202
作者
Faraci, G
Gibilisco, S
Russo, P
Pennisi, AR
La Rosa, S
机构
[1] Catania Univ, Dipartimento Fis & Astron, MATIS, Ist Nazl Fis Materia, I-95123 Catania, Italy
[2] Elettra, Sincrotrone Trieste, Trieste, Italy
来源
PHYSICAL REVIEW B | 2006年 / 73卷 / 03期
关键词
D O I
10.1103/PhysRevB.73.033307
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A modified one-phonon confinement model is developed for the calculation of micro-Raman spectra in Si nanocrystals, permitting the simultaneous determination of the Raman frequency, intensity, and linewidth. Using a specific spatial correlation function and the Si phonon dispersion relations, the Raman spectra are calculated under the limitations imposed on the wave vector by the spatial confinement. Results are obtained as a function of the Si nanocrystal size in the range 1.2-100 nm. The frequency shift and line broadening of the Raman spectra are compared with experimental results reported in the literature.
引用
收藏
页数:4
相关论文
共 22 条
[1]   THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J].
CAMPBELL, IH ;
FAUCHET, PM .
SOLID STATE COMMUNICATIONS, 1986, 58 (10) :739-741
[2]   Calculations on the size effects of Raman intensities of silicon quantum dots [J].
Cheng, W ;
Ren, SF .
PHYSICAL REVIEW B, 2002, 65 (20) :1-9
[3]   DEPOSITION AND ANALYSIS OF SILICON CLUSTERS GENERATED BY LASER-INDUCED GAS-PHASE REACTION [J].
EHBRECHT, M ;
FERKEL, H ;
HUISKEN, F ;
HOLZ, L ;
POLIVANOV, YN ;
SMIRNOV, VV ;
STELMAKH, OM ;
SCHMIDT, R .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (09) :5302-5306
[4]   Photoluminescence and resonant Raman spectra of silicon films produced by size-selected cluster beam deposition [J].
Ehbrecht, M ;
Kohn, B ;
Huisken, F ;
Laguna, MA ;
Paillard, V .
PHYSICAL REVIEW B, 1997, 56 (11) :6958-6964
[5]  
FIJII M, 1996, PHYS REV B, V54, pR8373
[6]   Luminescence and Raman characterization of molecular and nanocrystalline silicon clusters [J].
Guyot, Y ;
Champagnon, B ;
Boudeulle, M ;
Melinon, P ;
Prevel, B ;
Dupuis, V ;
Perez, A .
THIN SOLID FILMS, 1997, 297 (1-2) :188-191
[7]  
IGBAL Z, 1981, SOLID STATE COMMUN, V37, P993
[8]   Photoluminescence and Raman scattering of silicon nanocrystals prepared by silicon ion implantion into SiO2 films [J].
Li, GH ;
Ding, K ;
Chen, Y ;
Han, HX ;
Wang, ZP .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (03) :1439-1442
[9]   Nanostructured silicon films obtained by neutral cluster depositions [J].
Melinon, P ;
Keghelian, P ;
Prevel, B ;
Perez, A ;
Guiraud, G ;
LeBrusq, J ;
Lerme, J ;
Pellarin, M ;
Broyer, M .
JOURNAL OF CHEMICAL PHYSICS, 1997, 107 (23) :10278-10287
[10]   Structural, vibrational, and optical properties of silicon cluster assembled films [J].
Mélinon, P ;
Kéghélian, P ;
Prével, B ;
Dupuis, V ;
Perez, A ;
Champagnon, B ;
Guyot, Y ;
Pellarin, M ;
Lermé, J ;
Broyer, M ;
Rousset, JL ;
Delichère, P .
JOURNAL OF CHEMICAL PHYSICS, 1998, 108 (11) :4607-4613