Photoluminescence and Raman scattering of silicon nanocrystals prepared by silicon ion implantion into SiO2 films

被引：51

作者：

Li, GH ^{[1
]}

Ding, K ^{[1
]}

Chen, Y ^{[1
]}

Han, HX ^{[1
]}

Wang, ZP ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 03期

关键词：

D O I：

10.1063/1.373836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) and Raman spectra of silicon nanocrystals prepared by Si ion implantion into SiO2 layers on Si substrate have been measured at room temperature. Their dependence on annealing temperature was investigated in detail. The PL peaks observed in the as-implanted sample originate from the defects in SiO2 layers caused by ion implantation. They actually disappear after thermal annealing at 800 degrees C. The PL peak from silicon nanocrystals was observed when thermal annealing temperatures are higher than 900 degrees C. The PL peak is redshifted to 1.7 eV and the intensity reaches maximum at the thermal annealing temperature of 1100 degrees C. The characterized Raman scattering peak of silicon nanocrystals was observed by using a right angle scattering configuration. The Raman signal related to the silicon nanocrystals appears only in the samples annealed at temperature above 900 degrees C. It further proves the formation of silicon nanocrystals in these samples. (C) 2000 American Institute of Physics. [S0021-8979(00)00215-2].

引用

页码：1439 / 1442

页数：4

共 17 条

[1] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J].