Annealing-induced blue shift in luminescence band from Si-implanted SiO2 layer

被引：29

作者：

Lan, AD ^{[1
]}

Liu, BX ^{[1
]}

Bai, XD ^{[1
]}

机构：

[1] TSING HUA UNIV,DEPT MAT SCI & ENGN,BEIJING 100084,PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 10期

关键词：

D O I：

10.1063/1.366317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The SiO2 layers thermally grown on Si wafers were implanted by 130 keV Si ions at liquid nitrogen temperature to a dose of 1x10(17) ions/cm(2). From the as-implanted samples, a visible photoluminescence band centered around 2.0 eV was observed. After postannealing at 1100 degrees C for 90 min another visible band in the range of 1.7 eV was detected. Interestingly, with increasing thermal annealing time, a blue shift in peak energy and an intensity variation of the 1.7 eV band were observed. A possible interpretation for the observations was discussed in terms of a so-called three-region model. (C) 1997 American Institute of Phyics.

引用

页码：5144 / 5147

页数：4

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