Amorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVD

被引：46

作者：

Stannowski, B

Schropp, REI

Wehrspohn, RB

Powell, MJ

机构：

[1] Univ Utrecht, Debye Inst, NL-3508 TA Utrecht, Netherlands

[2] Max Planck Inst Mikrostrukturphys, D-06120 Halle Saale, Germany

[3] Philips Res Labs, Redhill RH1 5HA, Surrey, England

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 299卷

关键词：

D O I：

10.1016/S0022-3093(01)01098-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigate the impact of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs). It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic mechanical stress in the a-Si:H layer. We study a series of bottom-ate TFTs incorporating a-Si:H deposited by VHF PECVD and hot-wire CVD. All TFTs exhibit good characteristics with mobilities of 0.6-0.7 cm(2)/V s. The mean activation energy EA and the slope of the barrier-height distribution kBT, for defect creation in the a-Si:H are determined, E. correlates to the intrinsic stress. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：1340 / 1344

页数：5

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