Pulsed current anodization: An effective method for fabricating patterned porous silicon p-n junction light- emitting diodes

被引：6

作者：

McGinnis, S ^{[1
]}

Sines, P ^{[1
]}

Das, B ^{[1
]}

机构：

[1] W Virginia Univ, Dept Comp Sci & Elect Engn, Morgantown, WV 26506 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 09期

关键词：

D O I：

10.1149/1.1390873

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper describes the results of our investigations of pulsed current anodization as an effective method for fabricating porous silicon patterned p-n junction light-emitting diodes (LEDs). Patterned LEDs are desired for improved LED performance and stability. The pulsed current technique was found to be desirable for fabricating patterned p-n junctions, in particular for devices with large doping. Photoluminescence measurements performed on the anodized structures confirm the formation of porous layer through the p-n junctions. The LEDs fabricated by this method show electroluminescence under forward bias conditions with improved device performance with increased doping density. (C) 1999 The Electrochemical Society. S1099-0062(99)04-096-1. All rights reserved.

引用

页码：468 / 471

页数：4

共 18 条

[1] 200 MHz optical signal modulation from a porous silicon light emitting device [J].

Balucani, M ;

La Monica, S ;

Ferrari, A .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :639-640

[2] Progress towards silicon optoelectronics using porous silicon technology [J].

Canham, LT ;

Cox, TI ;

Loni, A ;

Simons, AJ .

APPLIED SURFACE SCIENCE, 1996, 102 :436-441

[3] VISIBLE-LIGHT EMISSION FROM HEAVILY DOPED POROUS SILICON HOMOJUNCTION PN DIODES [J].

CHEN, ZL ;

BOSMAN, G ;

OCHOA, R .

APPLIED PHYSICS LETTERS, 1993, 62 (07) :708-710

[4] Porous silicon: From luminescence to LEDs [J].

Collins, RT ;

Fauchet, PM ;

Tischler, MA .

PHYSICS TODAY, 1997, 50 (01) :24-31

[5]

DAS B, UNPUB SEMICOND SCI T

[6]

Hou XY, 1996, APPL PHYS LETT, V68, P2323, DOI 10.1063/1.115845

[7] VISIBLE ELECTROLUMINESCENCE FROM POROUS SILICON [J].

KOSHIDA, N ;

KOYAMA, H .

APPLIED PHYSICS LETTERS, 1992, 60 (03) :347-349

[8] POROUS SILICON LIGHT-EMITTING P-N-JUNCTION [J].

LANG, W ;

STEINER, P ;

KOZLOWSKI, F ;

SANDMAIER, H .

JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) :169-173

[9]

Lazarouk S, 1998, PHYS STATUS SOLIDI A, V165, P87, DOI 10.1002/(SICI)1521-396X(199801)165:1<87::AID-PSSA87>3.0.CO

[10]

2-P

← 1 2 →