Resistive SiC-MESFET mixer

被引：9

作者：

Andersson, K ^{[1
]}

Eriksson, J ^{[1
]}

Rorsman, N ^{[1
]}

Zirath, H ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microelect, Microwave Elect Lab, S-41296 Gothenburg, Sweden

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2002年 / 12卷 / 04期

关键词：

high-level mixer; intermodulation distortion; intermodulation intercept point; resistive mixer; S-band; silicon carbide; wide bandgap semiconductors;

D O I：

10.1109/7260.993287

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-ended silicon carbide resistive MESFET mixer was designed and characterized. The mixer has a minimum conversion loss of 10.2 dB and an input third order intercept point of 35.7 dBm at 3.3 GHz.

引用

页码：119 / 121

页数：3

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